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SBP13007D Datasheet, WINSEMI SEMICONDUCTOR

SBP13007D transistor equivalent, high voltage fast-switching npn power transistor.

SBP13007D Avg. rating / M : 1.0 rating-12

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SBP13007D Datasheet

Features and benefits


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* Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in free wheeling diode General Description This Device is .

Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage.

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SBP13007D Page 1 SBP13007D Page 2 SBP13007D Page 3

TAGS

SBP13007D
High
Voltage
Fast-Switching
NPN
Power
Transistor
SBP13007-H1
SBP13007-H2
SBP13007-O
WINSEMI SEMICONDUCTOR

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